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d a t a sh eet product data sheet supersedes data of 2003 nov 28 2004 dec 06 discrete semiconductors pbss4330x 30 v, 3 a npn low v cesat (biss) transistor db ook, halfpage m3d109
2004 dec 06 2 nxp semiconductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x features ? sot89 (sc-62) package ? low collector-emitter saturation voltage v cesat ? high collector curre nt capability: i c and i cm ? higher efficiency leading to less heat generation ? reduced printed-circuit board requirements. applications ? power management ? dc/dc converters ? supply line switching ? battery charger ? lcd backlighting. ? peripheral drivers ? driver in low supply voltage applications (e.g. lamps and leds) ? inductive load driver (e.g. relays, buzzers and motors). description npn low v cesat transistor in a sot89 plastic package. marking note 1. * = p: made in hong kong. * = t: made in malaysia. * = w: made in china. quick reference data pinning type number marking code (1) pbss4330x *1r symbol parameter max. unit v ceo collector-emitter voltage 30 v i c collector current (dc) 3 a i cm peak collector current 5 a r cesat equivalent on-resistance 100 m pin description 1 emitter 2 collector 3 base 321 sym04 2 1 2 3 fig.1 simplified outline (sot89) and symbol. ordering information type number package name description version pbss4330x sc-62 plastic surface mounted package; collector pad for good heat transfer; 3 leads sot89
2004 dec 06 3 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x limiting values in accordance with the absolute maximum rating system (iec 60134). notes 1. device mounted on a fr4 printed-circuit board; si ngle-sided copper; tin-plated; standard footprint. 2. device mounted on a fr4 printed-circuit board; sing le-sided copper; tin-plated; mounting pad for collector 1 cm 2 . 3. device mounted on a fr4 printed-circuit board; sing le-sided copper; tin-plated; mounting pad for collector 6 cm 2 . 4. device mounted on a ceramic printed-circuit board 7 cm 2 , single-sided copper, tin-plated. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter ? 50 v v ceo collector-emitter voltage open base ? 30 v v ebo emitter-base voltage open collector ? 6 v i c collector current (dc) note 4 ? 3 a i cm peak collector current limited by t j(max) ? 5 a i b base current (dc) ? 0.5 a p tot total power dissipation t amb 25 c note 1 ? 550 mw note 2 ? 1 w note 3 ? 1.4 w note 4 ? 1.6 w t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c t amb ambient temperature ? 65 +150 c
2004 dec 06 4 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x handbook, halfpage 0 40 80 160 p tot (w) (1) (2) (3) 2 0 1.6 120 1.2 0.8 0.4 mle372 t amb ( c) (4) fig.2 power derating curves. (1) ceramic pcb; 7 cm 2 mounting pad for collector. (2) fr4 pcb; 6 cm 2 copper mounting pad for collector. (3) fr4 pcb; 1 cm 2 copper mounting pad for collector. (4) standard footprint.
2004 dec 06 5 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x thermal characteristics notes 1. device mounted on a fr4 printed-circuit board; si ngle-sided copper; tin-plated; standard footprint. 2. device mounted on a fr4 printed-circuit board; sing le-sided copper; tin-plated; mounting pad for collector 1 cm 2 . 3. device mounted on a fr4 printed-circuit board; sing le-sided copper; tin-plated; mounting pad for collector 6 cm 2 . 4. device mounted on a ceramic printed-circuit board 7 cm 2 , single-sided copper, tin-plated. symbol parameter conditions value unit r th(j-a) thermal resistance from junction to ambient in free air note 1 225 k/w note 2 125 k/w note 3 90 k/w note 4 80 k/w r th(j-s) thermal resistance from junction to soldering point 16 k/w 006aaa243 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 0 fig.3 transient thermal impedance as a function of pulse time; typical values. mounted on fr4 printed-circuit board; standard footprint.
2004 dec 06 6 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x 006aaa244 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 duty cycle = 1.00 0.75 0.50 0.20 0.05 0.02 0.01 0 0.33 0.10 fig.4 transient thermal impedance as a function of pulse time; typical values. mounted on fr4 printed-circuit board; mounting pad for collector 1 cm 2 . 006aaa245 10 1 10 2 10 3 z th(j-a) (k/w) 10 ? 1 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 duty cycle = 1.00 0.75 0.50 0.20 0.05 0.02 0.01 0 0.33 0.10 fig.5 transient thermal impedance as a function of pulse time; typical values. mounted on fr4 printed-circuit board; mounting pad for collector 6 cm 2 .
2004 dec 06 7 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x characteristics t amb = 25 c unless otherwise specified. note 1. pulse test: t p 300 s; 0.02. symbol parameter conditions min. typ. max. unit i cbo collector-base cut-off current v cb = 30 v; i e = 0 a ? ? 100 na v cb = 30 v; i e = 0 a; t j = 150 c ? ? 50 a i ces collector-emitter cut-off current v ce = 30 v; v be = 0 v ? ? 100 na i ebo emitter-base cut-off current v eb = 5 v; i c = 0 a ? ? 100 na h fe dc current gain v ce = 2 v i c = 0.1 a 300 ? ? i c = 0.5 a 300 ? ? i c = 1 a; note 1 270 ? 700 i c = 2 a; note 1 230 ? ? i c = 3 a; note 1 180 ? ? v cesat collector-emitte r saturation voltage i c = 0.5 a; i b = 50 ma ? ? 60 mv i c = 1 a; i b = 50 ma ? ? 110 mv i c = 2 a; i b = 100 ma ? ? 220 mv i c = 3 a; i b = 300 ma; note 1 ? ? 300 mv r cesat equivalent on-resistance i c = 3 a; i b = 300 ma; note 1 ? 80 100 m v besat base-emitter saturation voltage i c = 2 a; i b = 100 ma ? ? 1.1 v i c = 3 a; i b = 300 ma; note 1 ? ? 1.2 v v beon base-emitter turn-on voltage v ce = 2 v; i c = 1 a 1.0 ? ? v f t transition frequency i c = 100 ma; v ce = 5 v; f = 100 mhz 100 ? ? mhz c c collector capacitance v cb = 10 v; i e = i e = 0 a; f = 1 mhz ? ? 30 pf
2004 dec 06 8 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x handbook, halfpage 0 800 200 400 600 mrc321 10 ? 1 11010 2 10 3 10 4 h fe i c (ma) (1) (3) (2) fig.6 dc current gain as a function of collector current; typical values. v ce = 2 v. (1) t amb = 100 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage 0 1.2 0.4 0.8 mrc322 10 ? 1 11010 2 10 3 10 4 v be (v) i c (ma) (1) (3) (2) fig.7 base-emitter voltage as a function of collector current; typical values. v ce = 2 v. (1) t amb = ? 55 c. (2) t amb = 25 c. (3) t amb = 100 c. handbook, halfpage 1 10 ? 1 10 ? 2 10 ? 3 mrc323 10 ? 1 11010 2 10 4 10 3 v cesat (v) i c (ma) (1) (2) (3) fig.8 collector-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = 100 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage 1 10 ? 1 10 ? 2 10 ? 3 mrc324 10 ? 1 11010 2 10 4 10 3 v cesat (v) i c (ma) (1) (2) (3) fig.9 collector-emitter saturation voltage as a function of collector current; typical values. t amb = 25 c. (1) i c /i b = 100. (2) i c /i b = 50. (3) i c /i b = 10.
2004 dec 06 9 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x handbook, halfpage 0.2 1.2 0.8 1.0 mrc325 10 ? 1 11010 2 10 3 10 4 0.6 0.4 v besat (v) i c (ma) (2) (3) (1) fig.10 base-emitter saturation voltage as a function of collector current; typical values. i c /i b = 20. (1) t amb = ? 55 c. (2) t amb = 25 c. (3) t amb = 100 c. handbook, halfpage 0 2.0 5 0 1 2 3 4 0.4 0.8 1.2 1.6 mrc326 v ce (v) i c (a) (1) (2) (3) (4) (5) (8) (9) (10) (6) (7) fig.11 collector current as a function of collector-emitter volt age; typical values. t amb = 25 c. (1) i b = 25.0 ma. (2) i b = 22.5 ma. (3) i b = 20.0 ma. (4) i b = 17.5 ma. (5) i b = 15.0 ma. (6) i b = 12.5 ma. (7) i b = 10.0 ma. (8) i b = 7.5 ma. (9) i b = 5.0 ma. (10) i b = 2.5 ma. handbook, halfpage 10 2 10 1 10 ? 1 10 ? 2 mrc327 10 ? 1 110 10 3 10 4 10 2 r cesat ( ) i c (ma) (1) (2) (3) fig.12 equivalent on-resistance as a function of collector current; typical values. i c /i b = 20. (1) t amb = 100 c. (2) t amb = 25 c. (3) t amb = ? 55 c. handbook, halfpage mrc328 10 ? 1 11010 2 10 3 10 4 10 ? 1 10 ? 2 1 10 10 2 10 3 r cesat ( ) i c (ma) (1) (2) (3) fig.13 equivalent on-resistance as a function of collector current; typical values. (1) i c /i b = 10. (2) i c /i b = 5. (3) i c /i b = 1. t amb = 25 c.
2004 dec 06 10 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x package outline references outline version european projection issue date iec jedec jeita dimensions (mm are the original dimensions) sot89 to-243 sc-62 04-08-03 06-03-16 w m e 1 e e h e b 0 2 4 mm scale b p3 b p2 b p1 c d l p a plastic surface-mounted package; collector pad for good heat transfer; 3 leads sot8 9 123 unit a mm 1.6 1.4 0.48 0.35 c 0.44 0.23 d 4.6 4.4 e 2.6 2.4 h e l p 4.25 3.75 e 3.0 w 0.13 e 1 1.5 1.2 0.8 b p2 b p1 0.53 0.40 b p3 1.8 1.4
2004 dec 06 11 nxp semico nductors product data sheet 30 v, 3 a npn low v cesat (biss) transistor pbss4330x data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content, except for package outline drawings which were updated to the latest version. printed in the netherlands r75/03/pp12 date of release: 2004 dec 06 document order number: 9397 750 13882

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